Tracks the outcome from the Ge-nanoelectronics research activity at The University of New South Wales
Created by giordanoscappucci on 20/07/2011
Last updated: 30/09/11 at 17:32
Tags: Germanium STM MBE
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G. Scappucci gives an oral talk at the Italian-Australian workshop 2011 Nanostructures for Sensors, Electronics, Energy and Environment. He helped co-organizing this workshop with Prof. Motta.
G. Scappucci gives a talk at the International Workshop for Surface Physics, satellite of ECOSS.
G. Scappucci attends ECOSS-28, the european conference on surface science. He gives an oral talk "STM-patterned phosphorus nanostructures in germanium"
G. Scappucci visits IHP in Frankfurt(Oder), Germany and gives a talk titled "New avenues to an old material: ultra-doping Germanium with atomic precision"
Our paper "Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers" has been published today in Nanotechology
G Scappucci, G. Capellini, W. M. Klesse, M.Y. Simmons 2011 Nanotechnology 22 375203
G. Scappucci gives a colloquium at the school of Physics, UNSW.
Title: " New avenues to an "old" material: ultra-doping Germanium with atomic precision"
Our recent Nano Letters paper has been picked for as a spotlight article (Nanoelectronics with Germanium) in Nanowerk.com
G. Scappucci gives an oral talk at Symposium G of E-MRS Spring Meeting 2011, held in Nice, France.
Title of the talk was:
"Atomically-precise donor-based devices in single crystal germanium"
G. Scappucci gives an oral talk at Symposium J of E-MRS Spring Meeting 2011, held in Nice, France.
Title of the talk was:
"Direct ultra-fast laser patterning of semiconductor surfaces for atomic-scale fabrication in UHV"
Our paper "A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium" has been accepted and published in Nano Letters
An image from our recent Nanotechnology paper has been selected as a cover for Nanotechnology
Our paper "Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices" has been accepted and published in Nanotechnology
G. Scappucci and G. Capellini visit the University of Newcastle for possible collaborations. G. Scappucci gives the invited talk: "Atomic scale devices in germanium by STM"
Prof. Giovanni Capellini visits Giordano Scappucci at UNSW for three weeks to work on the Ge-project
A total funding of 8kA$ has been awarded for 2011 to the grant "Three-dimensional atomically precise circuits in Germanium" by CI Scappucci and PI Capellini
Our paper "Dual temperature encapsulation f phosphorus in germanium d-layers towards ultra-shallow junction"